Intel® Stratix® 10 MX FPGA Development Kit User Guide

ID 683867
Date 6/15/2020
Public
Document Table of Contents

4.6.3. High Bandwidth Memory (HBM2)

The integrated 3D stack High-Bandwidth DRAM Memory (HBM2) is a "near memory" implementation where the high-density stacked DRAM is integrated very close to the FPGA in the same package.

In this configuration, the in-package memory is able to deliver up to 512 GBps of total aggregate bandwidth which represents over 10 times increase in bandwidth compared to traditional "far memory" implemented in separate devices on the board.

The Intel® Stratix® 10 MX FPGA on this development kit has two 4 GB on-package 3D stacked HBM2 DRAM memories. Each of these DRAM stacks has:
  • 8 GB total density (4 GB x2)
  • 256 GB/sec total aggregate bandwidth
  • 8 independent channels, each 128 bit wide
  • Data transfer rates up to 2 Gbps, per signal, between core fabric and HBM2 DRAM
  • Full-rate transfer to core fabric
There are two Universal Interface Blocks (UIB).
  • CLK_UIB0_N/P: programmable LVDS clock inputs to UIB tiles 0 of the device.
  • CLK_UIB1_N/P: programmable LVDS clock inputs to UIB tiles 1 of the device.
  • 240 Ohm 1% external reference resistors
  • Test points on top-side of the board for ATB nodes access
  • atb0/atb1/atb2/atb3 - Each UIB has four ATB test points.
ESRAM has the following pins:
  • CLK_ESRAM0_N/P: LVDS input reference clock for ESRAM Block0
  • CLK_ESRAM1_N/P: LVDS input reference clock for ESRAM Block1
  • 2K Ohm 1% external reference resistors
  • atb0/atb1 – access pads for probing